(Press Release) Following successful cooperation talks, Infineon Technologies , Munich, and Nanya Technology Corporation (NTC), Taoyuen/Taiwan, have signed a non-binding Memorandum of Understanding about a cooperation on standard memory chips. Under the terms of the agreement, the two semiconductor manufacturers will co-develop advanced 0.09-micron and 0.07-micron production technologies for 300mm wafers starting October 2002, sharing the development costs. The companies have also agreed to set up a 50:50 joint venture for the production of DRAM chips and to build a new joint 300mm facility in Taiwan. The first 300mm wafers will already be produced at the end of 2003, and in the first stage production should reach a capacity of approximately 20,000 wafer starts per month by the second half of 2004. The joint venture will be based in Taoyuen, Taiwan, close to Nanya's current production facility. The transaction still requires approval by the antitrust authorities.